unisonic technologies co., ltd 2sd1804 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r209-006,e high current switching applications ? features * low collector-to-emitter saturation voltage * high current and high f t * excellent linerarity of h fe . * fast switching time * small and slim package making it easy to make utc 2sd1804 applied sets smaller. to-220 1 to-252 to-251 1 1 ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2sd1804-x-ta3-t 2sd1804l-x-ta3-t 2SD1804G-X-TA3-T to-220 b c e tube 2sd1804-x-tm3-t 2sd1804l-x-tm3-t 2sd1804g-x-tm3-t to-251 b c e tube 2sd1804-x-tn3-r 2sd1804l-x-tn3-r 2s d1804g-x-tn3-r to-252 b c e tape reel
2sd1804 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r209-006,e ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current i c 8 a collector current(pulse) i c(pulse) 12 a to-220 2 t a =25c to-251/to-252 1 w to-220 65 collector dissipation t c =25c to-251/to-252 p d 20 w junction temperature t j +150 c storage temperature t stg -55~+150 c note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =10 a, i e =0 60 v collector-emitter breakdown voltage bv ceo i c =1ma, r be = 50 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector cutoff current i cbo v cb =40v, i e =0 1 a emitter cutoff current i ebo v eb =4v, i c =0 1 a h fe1 v ce =2v, i c =0.5a 70 400 dc current gain h fe2 v ce =2v, i c =6a 35 gain-bandwidth product f t v ce =5v, i c =1a 180 mhz output capacitance c ob v ce =10v, f=1mhz 65 pf collector-emitter satu ration voltage v ce(sat) i c =4a, i b =0.2a 200 400 mv base-emitter satura tion voltage v be(sat) i c =4a, i b =0.2a 0.95 1.3 v storage time t stg see test circuit 500 ns fall time t f see test circuit 20 ns ? classification of h fe1 rank q r s t range 70-140 100-200 140-280 200-400
2sd1804 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r209-006,e ? test circuit
2sd1804 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r209-006,e ? typical characteristics colletcor current, i c -a colletcor current, i c -a colletcor current, i c -a dc current gain, h fe 7 5 3 2 100 0.1 7 5 3 2 1.0 7 2 3 5 gain-bandwidth product, f t -mhz 2 3 5 10 7 5 3 2 100 10 1.0 7 5 3 2 100 7 2 3 5 f=1mhz 2 3 5 10 output capacitance, c ob -pf 7 5 3 2 10 v ce =5v 7 5 f t -i c colletcor current, i c (a) c ob -v cb colletcor to base voltage, v cb (v)
2sd1804 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r209-006,e ? typical characteristics(cont.) 57 7 5 3 2 100 collector to emitter saturation voltage, v ce(sat) -mv 0.1 0.01 7 5 3 2 1.0 3 2 10 7 2 3 5 7 1000 t a =-25 t a =75 5 3 5 2 57 7 5 3 2 1.0 0.1 0.01 7 5 3 2 1.0 5 3 2 5 7 2 3 5 7 10 t a =75 t a =25 t a =-25 base to emitter saturation voltage, v be(sat) -v 3 7 10 i c /i b =20 7 10 2 i c /i b =20 t a =25 collector current, i c (a) v ce(sat) -i c collector current, i c (a) v be(sat) -i c 60 40 20 0 80 140 120 100 160 16 20 24 no heat sink p d -ta 4 8 12 0 collector dissipation, p c -w 7 5 3 2 10 1.0 7 5 3 2 100 0.1 2 3 5 2 3 5 0.01 collector current, i c -a 7 5 3 1.0 10 2 3 5 100ms d c operat i o n t c =25 dc op er at ion icp i c 1 2 0.1 7 7 7 2 t c =25 ,one pulse for pnp,minus sign is omitted. 10ms 1ms colletcor to emitter voltage, v ce (v) a s o ambient temperature, ta ( ) ta =2 5 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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